Publications
X Author: Eicke R. Weber
1997
Leung, Michael S.H., Ralf Klockenbrink, Christian F. Kisielowski, Hiroaki Fujii, Joachim Krüger, Sudhir G. Subramanya, André Anders, Zuzanna Liliental-Weber, Michael D. Rubin, Eicke R. Weber, and Joachim Krüger."Pressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source."Materials Research Society Proceedings
449.221 (1997). DOI
1996
Kisielowski, Christian F., Joachim Krüger, Sergei Ruvimov, Tadeusz Suski, Joel W. Ager III, Erin C. Jones, Zuzanna Liliental-Weber, Michael D. Rubin, Eicke R. Weber, Michael D. Bremser, Robert F. Davis, and Joachim Krüger."Strain Related Phenomena in GaN Thin Films."Physical Review B
54.24 (1996) 17745-17753. DOI
Fujii, Hiroaki, Christian F. Kisielowski, Joachim Krüger, Michael S.H. Leung, Ralf Klockenbrink, Michael D. Rubin, Eicke R. Weber, and Joachim Krüger."Impact of Growth Temperature, Pressure and Strain on the Morphology of GaN Films."Materials Research Society Symposium N – III-V Nitrides
449 (1996) 227. DOI
Kisielowski, Christian F., Joachim Krüger, Michael S.H. Leung, Ralf Klockenbrink, Hiroaki Fujii, Tadeusz Suski, Sudhir G. Subramanya, Joel W. Ager III, Michael D. Rubin, Eicke R. Weber, and Joachim Krüger."Origin of Strain in GaN Thin Films."23rd International Conference on the Physics of Semiconductors
4 (1996) 513.
1995
Chan, James S., Nathan W. Cheung, Lawrence F. Schloss, Erin C. Jones, William S. Wong, Nathan Newman, Xiaohong Liu, Eicke R. Weber, A. Gassman, and Michael D. Rubin."Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films."Applied Physics Letters
68.19 (1995) 2702-2704. DOI
Fu, T.C., Nathan Newman, Erin C. Jones, James S. Chan, Xiaohong Liu, Michael D. Rubin, Nathan W. Cheung, and Eicke R. Weber."The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy."Journal of Electronic Materials
24.4 (1995) 249-255. DOI