Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy

TitleFundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy
Publication TypeConference Paper
Year of Publication1994
AuthorsNathan Newman, T.C. Fu, Z. Liu, Zuzanna Liliental-Weber, Michael D Rubin, James S Chan, Erin C Jones, Jennifer T Ross, Ian M Tidswell, Kin Man Yu, Nathan W Cheung, Eicke R Weber
Call NumberLBL-37296
Abstract

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.

LBNL Report Number

LBL-37296

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