High Quality GaN Grown by Reactive Sputtering
Title | High Quality GaN Grown by Reactive Sputtering |
Publication Type | Journal Article |
Year of Publication | 1991 |
Authors | Jennifer T Ross, Michael D Rubin |
Journal | Mater. Lett |
Volume | 12 |
Pagination | 215 |
Call Number | LBL-31726 |
Abstract | Gallium nitride films were grown by reactive rf magnetron sputtering on sapphire substrates. Crystalline (1120) GaN films were obtained on (0112) sapphire at substratestemperatures between 640-680 °C. High N2 partial pressures are required to crystalize the GaN films. Nitrogen incorporation and crystal quality of GaN films are examined as a function of substrate temperature and nitrogen partial pressure. Band gaps of 3.4 eV, and photoluminescence peaks as narrow as 11 meV are reported for sputtered GaN films. |
LBNL Report Number | LBL-31726 |
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