Crystalline Growth of Wurtzite GAN on (111) GaAs

TitleCrystalline Growth of Wurtzite GAN on (111) GaAs
Publication TypeConference Paper
Year of Publication1992
AuthorsJennifer T Ross, Michael D Rubin, Ture K Gustafson
Conference NameMaterials Research Society Symposium
Abstract

Gallium Nitride films were grown on (111) Gallium Arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite GaN films grew epitaxially in basal orientation on (111) GaAs substrates. Heteroepitaxy was observed for growth temperatures between 550-600°C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17°. Possible surface reconstructions to explain the epitaxial growth are presented.

DOI10.1557/PROC-242-457
LBNL Report Number

LBL-32258